Electrostatic-discharge protecting circuit and method

Details Electrostatic-discharge protecting circuit and method Electrostatic-discharge protecting circuit and method

1996-11-13

1998-10-06

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2362

Patent

active

058180877

ABSTRACT:
An electrostatic-discharge (ESD) protecting circuit of a semiconductor device prevents damage from an ESD applied to an internal circuit through an input or output pad. The thickness of respective gate insulating layers of respective active devices of the electrostatic-discharge protecting circuit and internal circuit, which are formed within a given radius in the range of about 350.mu.m to about 1000.mu.m from the electrostatic-discharge protecting circuit, is thicker than the thickness of gate insulating layers of active devices formed outside the radius.

REFERENCES:
patent: 5072271 (1991-12-01), Shimizu et al.
"ESD: A Pervasive Reliability Concern for IC Technologies," Duvvury et al., Proceedings of the IEEE, vol. 81, No. 5. May 1993, pp. 690-702.
"Impact of Snapback-Induced Hole Injection on Gate Oxide Realiability of N-MOSFET's," Mistry et al., IEEE Electron Device Letters, vol. 11, No. 10, Oct. 1990, pp. 460-462.

Affiliated with

Also associated with

Rating

Electrostatic-discharge protecting circuit and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrostatic-discharge protecting circuit and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic-discharge protecting circuit and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-81271