Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-21
2006-02-21
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S358000, C257S363000, C365S080000, C365S081000
Reexamination Certificate
active
07002217
ABSTRACT:
The present invention relates to structures and methods that reduce ESD damage to electronic devices. In an embodiment, the structure is a parallel plate dissipative capacitor formed by sandwiching a dissipative dielectric layer between two conductive layers in series to the electronic device. The dissipative dielectric layer includes a nonconductive dielectric doped with a voltage dependent resistive material that defines a conductive threshold voltage. The structure functions as a voltage dependent resistor in response to an applied voltage such as an ESD surge voltage exceeding the defined conductive threshold voltage and dissipates the applied voltage into thermal energy before it can reach the electronic device and cause damage. The dissipative dielectric layer restores to a dielectric and the structure functions as a capacitor when the excess voltage is depleted that is drops below the defined conductive threshold voltage. In another embodiment, the structure is a parallel plate dissipative capacitors in series that enhances ESD mitigation through a capacitive voltage divider structure. The structures can be used in EMI/RFI shielding applications.
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Abraham Fetsum
Moll Robert
Solectron Corporation
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