Electrostatic discharge input and power clamp circuit for...

Details Electrostatic discharge input and power clamp circuit for... Electrostatic discharge input and power clamp circuit for...

2005-09-20

2005-09-20

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06946707

ABSTRACT:
A SiGe ESD (electrostatic discharge) power clamp circuit having a forward biased trigger device fabricated in a given technology and a clamp transistor preferably comprising a high frequency cutoff SiGe npn transistor, wherein the trigger device has a turn-on voltage which is below the Johnson Limit breakdown voltage of the highest frequency device fabricated in the given technology.

REFERENCES:
patent: 6429489 (2002-08-01), Botula et al.
patent: 6600356 (2003-07-01), Weiss
“Silicon Germanium Heterojunction Bipolar Transistor ESD Power Clamps and the Johnson Limit”, published Proceedings of EOS/ESD Sympopsium 2002.

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