Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2005-10-20
2008-07-22
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S203000, C257S204000, C257S205000, C257S206000, C257S207000, C257S208000, C257S209000, C257S210000, C257S211000, C257S355000, C257S356000, C257S357000, C257S358000, C257S359000, C257S360000, C257S362000, C257S363000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
07402846
ABSTRACT:
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has a contact row and at least one body contact row. The at least one body contact row is located on the active device in a manner to reduce the amount of voltage required for triggering the ESD protection structure.
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Dudek Volker
Graf Michael
Grombach Peter
Klaussner Manfred
Miller, Jr. Gayle W.
Atmel Corporation
Schwegman Lundberg & Woessner, P.A.
Soward Ida M
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