Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257S357000
Reexamination Certificate
active
06879003
ABSTRACT:
An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well in the P-epitaxial layer and encompassing the P-well, an N-Buried Layer (NBL) underneath the P-well and bordering the N-well. The P-well is fully isolated by the N-well and the NBL. The NMOS device further includes a first isolation structure consisting of a gate-insulating layer connected with a field oxide layer, which is formed on the P-epitaxial layer. A gate overlies the first isolation structure. A second isolation structure laterally spaced apart from the first isolation structure is approximately situated on the N-well. An N+source doping region, which functions as a source of the NMOS device, is disposed in the P-well. An N+drain doping region, which functions as a drain of the NMOS device, is disposed in the N-well.
REFERENCES:
patent: 5870268 (1999-02-01), Lin et al.
patent: 6399990 (2002-06-01), Brennan et al.
Chao Fang-Mei
Cheng Chih-Nan
Lu Yii-Chian
Tran Thien F
United Microelectronics Corp.
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