Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-14
2007-08-14
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000, C257S355000
Reexamination Certificate
active
10696526
ABSTRACT:
The present invention provides a combinded FOX and poly gate structure, for effectively reducing the trigger voltage of a conventional field device, for improving the robustness of a NMOS transistor of a small drive I/O circuit, and for improving the ESD performance of a stack-gate voltage tolerant I/O.
REFERENCES:
patent: 5248892 (1993-09-01), Van Roozendaal et al.
patent: 5721439 (1998-02-01), Lin
patent: 6046087 (2000-04-01), Lin et al.
patent: 6064095 (2000-05-01), Fu
patent: 6153913 (2000-11-01), Hsu et al.
patent: 6157065 (2000-12-01), Huang et al.
patent: 6236073 (2001-05-01), Hsu
patent: 6465308 (2002-10-01), Cheng et al.
patent: 6573568 (2003-06-01), Lin et al.
Chen Wei-Fan
Lin Shi-Tron
Barkume, P.C. Anthony R.
Crane Sara
Winbond Electronics Corp.
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