Electrostatic discharge (ESD) protection device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S361000, C257S355000

Reexamination Certificate

active

10696526

ABSTRACT:
The present invention provides a combinded FOX and poly gate structure, for effectively reducing the trigger voltage of a conventional field device, for improving the robustness of a NMOS transistor of a small drive I/O circuit, and for improving the ESD performance of a stack-gate voltage tolerant I/O.

REFERENCES:
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patent: 5721439 (1998-02-01), Lin
patent: 6046087 (2000-04-01), Lin et al.
patent: 6064095 (2000-05-01), Fu
patent: 6153913 (2000-11-01), Hsu et al.
patent: 6157065 (2000-12-01), Huang et al.
patent: 6236073 (2001-05-01), Hsu
patent: 6465308 (2002-10-01), Cheng et al.
patent: 6573568 (2003-06-01), Lin et al.

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