Electrostatic discharge device

Details Electrostatic discharge device Electrostatic discharge device

2006-06-27

2006-06-27

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S357000, C257S499000, C257S501000

Reexamination Certificate

active

07067884

ABSTRACT:
M pieces of n-well regions nW are provided on a main surface of a p-type silicon substrate3, and p-well regions pW are provided among the n-well regions adjacent to one another. Moreover, each of the M pieces of n-well regions nW includes an n-type diffusion region nD and a p-type diffusion region pD1, which are formed therein. Furthermore, the p-well region pW includes a p-type diffusion region pD2therein. The n-type diffusion region nD in a j-th of the n-well region nW is connected to the p-type diffusion region pD1in a (j+1)-th of the n-well region10. The p-type diffusion region pD1in the first n-well region nW is connected to a first terminal1. The n-type diffusion region nD in the M-th of the n-well region nW is connected to a second terminal2. In response to a potential relation between desired terminal to be protected (not depicted) and discharge terminal (not depicted) during a normal operation, the first terminal is connected to either one of the terminals, of which potential is higher, and the second terminal2is connected to the other of which potential is lower.

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