Electrostatic damage protection device with protection...

Details Electrostatic damage protection device with protection... Electrostatic damage protection device with protection...

2007-09-25

2007-09-25

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S360000, C257S361000, C257S362000, C257S173000, C257S174000

Reexamination Certificate

active

10979804

ABSTRACT:
This invention provides an electrostatic damage protection device which can protects a device to be protected enough from an electrostatic damage and prevents damages of protection transistors themselves. A N-channel type first MOS transistor and a N-channel type second MOS transistor serving as protection transistors are connected in series between an output terminal and a ground potential. On the other hand, a P-channel type third MOS transistor and a P-channel type fourth MOS transistor serving as protection transistors are connected in series between a high power supply potential and the output terminal. These first, second, third, and fourth MOS transistors are formed of low withstand voltage MOS transistors.

REFERENCES:
patent: 5602409 (1997-02-01), Olney
patent: 5675168 (1997-10-01), Yamashita et al.
patent: 6043968 (2000-03-01), Haruki
patent: 6396107 (2002-05-01), Brennan et al.
patent: 6404269 (2002-06-01), Voldman
patent: 6963111 (2005-11-01), Reddy et al.
patent: 5-267586 (1993-10-01), None
patent: 1999-007170 (1999-01-01), None
patent: 2002-0052874 (2002-07-01), None

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