Electrostatic chucking method

Details Electrostatic chucking method Electrostatic chucking method

1991-08-06

1993-06-22

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429815, 20429831, 156643, C23F 404

Patent

active

052214508

ABSTRACT:
Disclosed is an electrostatic chucking method, comprising the steps of: (a) placing a substrate to be chucked electrostatically on a chucking material containing an electrode; (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the electrode in the chucking material; (c) removing the substrate from the chucking material; and (d) eliminating residual charges on the chucking material by sputtering it with a plasma gas for a predetermined period. Further, the plasma gas may be capable of etching the chucking material.

REFERENCES:
patent: 4384918 (1983-05-01), Abe
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 5092729 (1992-03-01), Yamazaki et al.

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