Electrostatic chuck with reference electrode

Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field

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H02N 1300

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active

055615856

ABSTRACT:
An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing. An alternate embodiment further suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

REFERENCES:
patent: 5400209 (1995-03-01), Moslehi
patent: 5436790 (1995-01-01), Blake et al.
patent: 5444597 (1995-08-01), Blake et al.
patent: 5467249 (1995-11-01), Westerfield et al.

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