Electrostatic chuck having relatively thick and thin areas and m

Details Electrostatic chuck having relatively thick and thin areas and m Electrostatic chuck having relatively thick and thin areas and m

1994-05-12

1996-05-28

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Electric charge generating or conducting means

Use of forces of electric charge or field

279128, H02N 1300

Patent

active

055217907

ABSTRACT:
An aluminum electrostatic chuck for holding semiconductor wafers during wafer processing. The chuck is characterized by a closely determined magnitude of electrostatic holding force due to an anodization step for creating a finely uniform thickness of dielectric material on the chuck surface facing the wafer which, in turn, determines the holding force. The chuck cross section comprises two different thickness areas with fluid cooling being applied to the thinner thickness area during chuck anodization to assure thickness uniformity of the anodized material across the face of the chuck.

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patent: 5115858 (1992-05-01), Fitch et al.
patent: 5155652 (1992-10-01), Logan et al.
G. Fortuno et al., "Electrostatic Wafer Holder for Wafer Cooling During Reactive Ion Etching", IBM Tech. Discl. Bulletin, vol. 31, No. 1, Jun. 1988, pp. 462-464.

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