Electrostatic chuck

Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field

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279128, H02N 1300

Patent

active

060287624

ABSTRACT:
In an electrostatic chunck with grooves formed on the dielectric layer surface, the rate of foreign matter adhering to the semiconductor wafer is reduced and at the same time the semiconduticor wafer can be uniformly heated without causing leakage of lie or other gases supplied to the grooves of the said holding surface into the chamer. The electrostatic chuck is composed of a dielectric layer made from ceramics or sapphire which has electrostatic electrodes, holding surface positioned on a same plane and concave spaces positioned next to the holding surface, at least one of the said holding surface being circumference, and the outermost such holding surface having a width of 1-20 .mu.m and being a smooth surface having a center line average roughness (Ra) of 0.3 .mu.m or less.

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GPI Web Client Abstract of Japan JP405267436A, to GOTO, Appl. JP 04064122, Oct. 1993.
GPI Web Client Abstract of Japan JP401251735A, to SEKINE, Appl. JP 63078975, Oct. 1989.

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