Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-29
2008-07-29
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S667000, C438S677000, C257SE21597, C029S852000, C205S125000
Reexamination Certificate
active
07405146
ABSTRACT:
An electroplating method by transmitting electric current from a ball side is provided. In the electroplating method, the circuit layer is firstly formed on the bump side of the IC board, and the electric current is transmitted to the portion of the circuit layer uncovered by the insulating layer formed on the bump side from the electroplated metal layer on the ball side to form the protective layer (the electroplated gold layer) on the portion of the circuit layer. In such a way, the electroplated gold layer cannot be formed under the insulating layer formed on the bump side (attached with the chip) because the electroplated gold layer is formed after the insulating layer has been formed, and thereby the fall-off of the insulating layer from the electroplated gold layer will not happen. Therefore, the reliability of the products is enhanced.
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Kinsus Interconnect Technology Corp.
Smoot Stephen W
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