Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-23
2000-08-29
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438611, 438613, 438614, 438615, 438616, 438617, 22818021, 22818022, 2281805, H01L 2144
Patent
active
061108154
ABSTRACT:
A method of electroplating a high density integrated circuit (IC) substrate using a conductive elastomer including the steps of providing an IC substrate made of nonconductive material having a plurality of conductive traces with conductive trace lands formed on its surface. Covering only the traces (not the trace lands) with a plating resist and exposing portions of the conductive traces. Inserting the IC substrate into a electroplating fixture. Engaging a conductive elastomer to the IC substrate, covering the plurality of conductive traces and electrically connecting all of the traces together. Electroplating the trace lands on the IC substrate with conductive material (such as gold or nickel) by using the conductive elastomer as the electrical connection to the trace lands (via the exposed metal traces). Disengaging the conductive elastomer after electroplating is finished and removing the IC substrate from the electroplating fixture.
REFERENCES:
patent: 5180691 (1993-01-01), Adachi et al.
Alagaratnam Maniam
Chia Chok J.
Variot Patrick
Lebens Thomas F.
LSI Logic Corporation
Niebling John F.
Zarneke David A.
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