Electronically programmable read only memory

Details Electronically programmable read only memory Electronically programmable read only memory

1982-06-17

1984-12-11

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Semiconductive

365100, G11C 1140

Patent

active

044882629

ABSTRACT:
An electrically programmable read only memory assembly having cells arranged at the intersections of bit lines (BL1) and word lines (WL1, WL2), wherein each cell is formed of a bipolar transistor provided with a base region (70) and an emitter region (71) covered with a dielectric layer (2) made of an oxide or titanate of a transition metal. The cell in this condition represents a binary 0 information bit. The application of an appropriate voltage of approximately 4 volts to the pads of this cell through its corresponding bit line (BL1) and word line (WL2) causes the dielectric layer to break down and places the bit line in ohmic contact with the emitter, which sets the cell in its second condition representing a binary "1" information bit.

REFERENCES:
patent: 3576549 (1971-04-01), Hess
patent: 3787822 (1974-01-01), Rioult
patent: 3876944 (1975-04-01), Mack et al.
patent: 3979734 (1976-09-01), Pricer et al.
patent: 4174521 (1979-11-01), Neale
patent: 4176442 (1979-12-01), Bischoff et al.
patent: 4312046 (1982-01-01), Taylor
patent: 4424578 (1984-01-01), Miyamoto
Bracco et al., IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970, "Write-Once Read Only Store", p. 1308.
Abbas, IBM Technical Disclosure Bulletin, vol. 13, No. 6, Nov. 1970, "Electrically Encoatable Read-Only Store", 1426-1427.
Herrell et al., IBM Technical Disclosure Bulletin, vol. 15, No. 3, Aug. 1972, "Write Once Read-Only Store", pp. 949-950.
Hnatek, Micro Electronics Reliability, vol. 18, pp. 325-332 entitled "Bipolar PROM Reliability".
Ramachandrin, Electronics, Jul. 6, 1978, pp. 106-111, "Single-Supply Erasable PROM Saves Power with C-MOS Process".
Seaward et al., Extended Abstracts, vol. 77, No. 2, pp. 945-950, Oct. 1977, "Uniformity of Oxygen Doped Polysilicon Films".
Chemical Abstracts, vol. 86, No. 8, p. 415, No. 49598r, Feb. 1977, "Thin Ferroelectric Films of Barium Titanate on Doped Silicon" by the Electrical Engineering Department of the University of New Mexico at Albequerque.

Affiliated with

Also associated with

Rating

Electronically programmable read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electronically programmable read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronically programmable read only memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1467796