Patent
1997-09-02
1999-11-09
Teska, Kevin J.
G06F 9455
Patent
active
059830115
ABSTRACT:
In order to simulate, using a computer, a profile of sputter deposition on a contact hole formed on a semiconductor wafer, a plurality of trajectories of particles emitted from a sputter target are calculated. One of the trajectories is directed to a first coordinate point which is included in the profile of sputter deposition and with which an amount of sputter deposition is calculated. Thereafter, a plurality of shadow judgment planes are successively defined with respect to all coordinate points, after which a check is made to determine if the above mentioned one of the plurality of trajectories crosses each of said plurality of shadow judgment planes.
REFERENCES:
patent: 5556525 (1996-09-01), Krivokapic et al.
patent: 5733426 (1998-03-01), Cox et al.
patent: 5815684 (1998-09-01), Ohta et al.
Neri, Sputtering Magnetron Experiments and Modeling, May 1990, p. 202.
Howell et al., Depdendence of Orientation and Electrical Properties in Sputtered ZnO upon Deposition Conditions and Substrate, Jul. 1988, pp. 677-680.
Bang et al., A Multiple Target Sputter System and Enhanced Wafer Uniformity Lifetime Uniformity and Wafer Scaleability, May 1994, pp. 2131-2134.
Ohta Toshiyuki
Yamada Hiroaki
Fiul Dan
NEC Corporation
Teska Kevin J.
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