Electronic systems using optical waveguide interconnects...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257S432000

Reexamination Certificate

active

11342940

ABSTRACT:
An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is deposited so as to line an inner surface of the high aspect ratio holes which may be filled with air or a material with an index of refraction that is greater than 1. These metal confined waveguides are used to transmit signals between functional circuits on the semiconductor wafer and functional circuits on the back of the wafer or beneath the wafer.

REFERENCES:
patent: 3968564 (1976-07-01), Springthorpe
patent: 4452508 (1984-06-01), Beales et al.
patent: 4734384 (1988-03-01), Tsuchiya
patent: 4744623 (1988-05-01), Prucnal et al.
patent: 4920070 (1990-04-01), Mukai
patent: 4970578 (1990-11-01), Tong et al.
patent: 5039189 (1991-08-01), Lytel et al.
patent: 5128831 (1992-07-01), Fox, III et al.
patent: 5200631 (1993-04-01), Austin et al.
patent: 5221633 (1993-06-01), Holm et al.
patent: 5312765 (1994-05-01), Kanber
patent: 5352998 (1994-10-01), Tanino
patent: 5362976 (1994-11-01), Suzuki
patent: 5409563 (1995-04-01), Cathey
patent: 5416872 (1995-05-01), Sizer, II et al.
patent: 5431775 (1995-07-01), Prince
patent: 5483614 (1996-01-01), Bruck et al.
patent: 5489554 (1996-02-01), Gates
patent: 5532506 (1996-07-01), Tserng
patent: 5587119 (1996-12-01), White
patent: 5604835 (1997-02-01), Nakamura et al.
patent: 5618752 (1997-04-01), Gaul
patent: 5641545 (1997-06-01), Sandhu
patent: 5652811 (1997-07-01), Cook et al.
patent: 5656548 (1997-08-01), Zavracky et al.
patent: 5682062 (1997-10-01), Gaul
patent: 5729038 (1998-03-01), Young et al.
patent: 5739067 (1998-04-01), DeBusk et al.
patent: 5742100 (1998-04-01), Schroeder et al.
patent: 5760478 (1998-06-01), Bozso et al.
patent: 5767001 (1998-06-01), Bertagnolli et al.
patent: 5796714 (1998-08-01), Chino et al.
patent: 5798297 (1998-08-01), Winnerl et al.
patent: 5834849 (1998-11-01), Lane
patent: 5844289 (1998-12-01), Teranishi et al.
patent: 5848214 (1998-12-01), Haas et al.
patent: 5858814 (1999-01-01), Goossen et al.
patent: 5858877 (1999-01-01), Dennison et al.
patent: 5897333 (1999-04-01), Goossen et al.
patent: 5900674 (1999-05-01), Wojnarowski et al.
patent: 5901050 (1999-05-01), Imai
patent: 5902118 (1999-05-01), Hubner
patent: 5903045 (1999-05-01), Bertin et al.
patent: 5915167 (1999-06-01), Leedy
patent: 5952665 (1999-09-01), Bhargava
patent: 5963088 (1999-10-01), Czarnul et al.
patent: 6087899 (2000-07-01), Kubota
patent: 6090636 (2000-07-01), Geusic et al.
patent: 6122187 (2000-09-01), Ahn et al.
patent: 6143616 (2000-11-01), Geusic et al.
patent: 6150188 (2000-11-01), Geusic et al.
patent: 6181864 (2001-01-01), Jang et al.
patent: 6187677 (2001-02-01), Ahn
patent: 6198168 (2001-03-01), Geusic et al.
patent: 6281042 (2001-08-01), Ahn et al.
patent: 6777715 (2004-08-01), Geusic et al.
patent: 6995441 (2006-02-01), Geusic et al.
patent: 56-055067 (1981-05-01), None
patent: 03-013907 (1991-01-01), None
patent: 04-263462 (1992-09-01), None
patent: 05-145060 (1993-06-01), None
patent: WO-91/11833 (1991-08-01), None
patent: WO-94/05039 (1994-03-01), None
Forbes, L., et al., “Resonant Forward-Biased Guard-Ring Diodes for Suppression of Substrate Noise in Mixed-Mode CMOS Circuits”,Electronics Letters, 31, (Apr. 1995),720-721.
Foster, R., et al., “High Rate Low-Temperature Selective Tungsten”,In: Tungsten and Other Refractory Metals for VLSI Applications III, V.A. Wells, ed., Materials Res. Soc., Pittsburgh, PA,(1988),69-72.
Gong, S., “Techniques for reducing switching noise in high speed digital systems”,Proceedings Eighth Annual IEEE International ASIC Conference and Exhibit, (1995),21-24.
Heavens, O.,Optical Properties of Thin Solid FilmsDover Pubs. Inc., New York,(1965),155-206.
Horie, Hiroshi, et al., “Novel High Aspect Ratio Aluminum Plug for Logic/DRAM LSI's Using Polysilicon-Aluminum Substitute”,Technical Digest: IEEE International Electron Devices Meeting, San Francisco, CA,(1996),946-948.
Kim, Y. S., “A Study on Pyrolysis DMEAA for Selective Deposition of Aluminum”,In: Advanced Metallization and Interconnect Systems for ULSI Applications in 1995, R.C. Ellwanger, et al., (eds.), Materials Research Society, Pittsburgh, PA,(1996),675-680.
Klaus, J W., et al., “Atomic Layer Controlled Growth of SiO2 Films Using Binary Reaction Sequence Chemistry”,Applied Physics Letters, 70(9), (Mar. 3, 1997),1092-94.
Lehmann, et al., “A Novel Capacitor Technology Based on Porous Silicon”,Thin Solid Films 276, Elsevier Science, (1996), 138-42.
Lehmann, V.; “The Physics of Macropore Formation in Low Doped n-Type Silicon”,Journal of the Electrochemical Society, 140(10), (Oct. 1993),2836-2843.
Masu, K., et al., “Multilevel Metallization Based on AI CVD”,1996 IEEE Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI,(Jun. 11-13, 1996),44-45.
McCredie, B. D., et al., “Modeling, Measurement, and Simulation of Simultaneous Switching Noise”,IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part B, 19, (Aug. 1996),461-472.
Muller, K., et al., “Trench Storage Node Technology for Gigabit DRAM Generations”,Digest IEEE International Electron Devices Meeting, San Francisco, CA,(Dec. 1996),507-510.
Ohba, T., et al., “Evaluation on Selective Deposition of CVD W Films by Measurement of Surface Temperature”,In: Tungsten and Other Refractory Metals for VLSI Applications II, Materials Research Society, Pittsburgh, PA,(1987),59-66.
Ohba, T., et al., “Selective Chemical Vapor Deposition of Tungsten Using Silane and Polysilane Reductions”,In: Tungsten and Other Refractory Metals for VLSI Applications IV, Materials Research Society, Pittsburgh, PA,(1989),17-25.
Ott, A W., et al., “AI3O3 Thin Film Growth on Si(100) Using Binary Reaction Sequence Chemistry”,Thin Solid Films, vol. 292, (1997),135-44.
Ramo, S., “Fields and Waves in Communication Electronics, Third Edition”, John Wiley & Sons, Inc.,(1994),428-433.
Senthinathan, R., et al., “Reference Plane Parasitics Modeling and Their Contribution to the Power and Ground Path “Effective” Inductance as Seen by the Output Drivers”,IEEE Transactions on Microwave Theory and Techniques, 42, (Sep. 1994),1765-1773.
Stanisic, B. R., et al., “Addressing Noise Decoupling in Mixed-Signal IC's: Power Distribution Design and Cell Customization”,IEEE Journal of Solid-State Circuits, 30, (Mar. 1995),321-326.
Su, D. K., et al., “Experimental Results and Modeling Techniques for Substrate Noise in Mixed Signal Integrated Circuits”,IEEE Journal of Solid State Circuits, vol. SC-28, (1993),420-30.
Suntola, T., “Atomic Layer Epitaxy”,Handbook of Crystal Growth, 3; Thin Films of Epitaxy, Part B: Growth Mechanics and Dynamics, Amsterdam,(1994),601-663.
Sze, S M.,VLSI Technology, 2nd Edition, Mc Graw-Hill, NY, (1988),90.
Vittal, A., et al., “Clock Skew Optimization for Ground Bounce Control”,1996 IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, San Jose, CA,(Nov. 10-14, 1996),395-399.

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