Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2005-08-09
2005-08-09
Thompson, Craig A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C438S106000
Reexamination Certificate
active
06927471
ABSTRACT:
This specification describes techniques for manufacturing an electronic system module. The module includes flexible multi-layer interconnection circuits with trace widths of 5 microns or less. A glass panel manufacturing facility, similar to those employed for making liquid crystal display, LCD, panels is used to fabricate the interconnection circuits. A polymer base layer is formed on a glass carrier with an intermediate release layer. Alternate layers of metal and dielectric are formed on the base layer, and patterned to create an array of multi-layer interconnection circuits on the glass panel. A thick layer of polymer is deposited on the interconnection circuit, and openings formed at input/output (I/O) pad locations. Solder paste is deposited in the openings to form wells filled with solder. After dicing the glass carrier to form separated interconnection circuits, IC chips are stud bumped and assembled using flip chip bonding, wherein the stud bumps on the components are inserted into corresponding wells on the interconnection circuits. The IC chips are tested and reworked to form tested circuit assemblies. Methods for connecting to testers and to other modules and electronic systems are described. Module packaging layers are provided for hermetic sealing and for electromagnetic shielding. A blade server embodiment is also described.
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Dorsey & Whitney LLP
Harrison Monica
Salmon Peter C.
Thompson Craig A.
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