Electronic switching device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S107000, C257S124000, C257S133000, C257S140000, C257S155000, C257S156000, C257SE29001, C257SE29029, C257SE29039, C257SE29040, C257SE29116

Reexamination Certificate

active

07872315

ABSTRACT:
An integrated switching device has a switching IGFET connected between a pair of main terminals, a protector IGFET connected between the drain and gate electrodes of the switching IGFET, and a gate resistor connected between a main control terminal and the gate electrode of the switching IGFET. The protector IGFET has its gate electrode connected to the source electrode of the switching IGFET. The protector IGFET turns on in response to an application of a verse voltage to the switching IGFET thereby protecting the same from a reverse current flow.

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patent: 2010/0084706 (2010-04-01), Kocon
patent: 07-015009 (1995-01-01), None

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