Electronic structures including conductive shunt layers

Details Electronic structures including conductive shunt layers Electronic structures including conductive shunt layers

2005-11-01

2005-11-01

Wilson, Christian (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

C257S737000, C257S738000

Reexamination Certificate

active

06960828

ABSTRACT:
Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.

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W.J. Choi et al;Electromigration of Flip Chip Solder Bump on Cu/Ni(V) A1 Thin Film Under Bump Metallization;

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