Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-01-11
1997-03-18
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257779, 257786, H01L 2348, H01L 2352, H01L 2940
Patent
active
056125739
ABSTRACT:
A circuitized substrate for use in an electronic package wherein the substrate, e.g., ceramic, includes more than one conductive layer, e.g. , copper, thereon separated by a suitable dielectric material, e.g. , polyimide. Each layer includes its own conductive location(s) which are designed for being directly electrically connected, e.g., using solder, to respective contact sites on a semiconductor chip positioned on the substrate to form part of the final package. A method for making such a package is also provided. Significantly, the resulting package does not include interconnections between the conductive layers at the desired contact locations, these locations, as mentioned, instead being directly connected to the chip.
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International Journal of Hybrid Microelectronics & Electronics Packaging, "Characteristics and Performance of PHP-92: AT&T's Triazine-Based Dielectric for Polyhic MCMs", E. Sweetman, vol. 15, No. 4, 4Q92, pp. 195-204.
International Electronic Manufacturing Technology Symposium, "A Fine-Line Multilayer Substrate with Photo-Sensitive Polyimide Dielectric and Electroless Copper Plated Conductors", Ohsaka et al., No. 1987, Oct. 12, 1987, pp. 178-183.
IEEE Transactions on Components, Hybrids and Manufacturing Technology, "Solder Connections with a Ni Barrier", Keller et al., vol. CHMT-9, No. 4, Dec. 1986, pp. 433-439.
Lewis Robert L.
Sebesta Robert D.
Waits Daniel M.
Clark S. V.
Fraley Lawrence R.
International Business Machines - Corporation
Saadat Mahshid D.
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