Electronic memory device utilizing silicon-on-sapphire transisto

Details Electronic memory device utilizing silicon-on-sapphire transisto Electronic memory device utilizing silicon-on-sapphire transisto

1988-05-05

1989-09-12

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365118, G11C 1134

Patent

active

048666696

ABSTRACT:
An electronic memory device is disclosed which utilizes silicon-on-sapphire SOS) transistors that exhibit binary states dependent upon the dose of ionizing radiation to which they are subjected. A memory utilizing such SOS transistors may have information written into it, permenently or for a short period of time, by electron-beam bombardment so that the memory operates as a PROM. The memory may also operate as a RAM when a scanning electron beam, in conjunction with appropriately applied biases, is used to read and write information at a high rate.

REFERENCES:
patent: 3656121 (1972-04-01), Rajchman et al.

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