Electronic material, its manufacturing method, dielectric capaci

Details Electronic material, its manufacturing method, dielectric capaci Electronic material, its manufacturing method, dielectric capaci

1997-12-22

2000-01-04

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257306, H01L 2976, H01L 2994, H01L 27108, H01L 31119

Patent

active

060112840

ABSTRACT:
An electronic material is expressed by the composition formula M.sub.Ia M.sub.IIb O.sub.c (where a, b and c are compositions in atomic %, M.sub.I is at least one sort of noble metal selected from the group consisting of Pt, Ir, Ru, Rh and Pd, and M.sub.II is at least one sort of transition metal selected from the group consisting of Hf, Ta, Zr, Nb, V, Mo and W) having a composition within the range of 90.gtoreq.a.gtoreq.40, 15.gtoreq.b.gtoreq.2, 4.ltoreq.c and a+b+c=100. A dielectric capacitor comprises: a diffusion preventing layer made of the material expressed by the composition formula M.sub.ia M.sub.IIb O.sub.c ; a lower electrode on the diffusion preventing layer; a dielectric film on the lower electrode; and an upper electrode on the dielectric film. Another dielectric capacitor comprises: a diffusion preventing layer made of a material expressed by the composition formula M.sub.Ia M.sub.IIb O.sub.c (where a, b and c are compositions in atomic %, M.sub.II is at least one sort of noble metal selected from the group consisting of Pt, Ir, Ru, Rh and Pd, and M.sub.II is at least one sort of rare earth element) having a composition within the range of 90.gtoreq.a.gtoreq.40, 15.gtoreq.b.gtoreq.2, 4.ltoreq.c and a+b+c=100; a lower electrode on the diffusion preventing layer; a dielectric film on the lower electrode; and an upper electrode on the dielectric film.

REFERENCES:
patent: 5157540 (1992-10-01), Kidai et al.
patent: 5293510 (1994-03-01), Takenaka
patent: 5598293 (1997-01-01), Green

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