Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-09-04
2010-11-30
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51007, C257SE51013, C438S591000, C349S051000
Reexamination Certificate
active
07842946
ABSTRACT:
Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.
REFERENCES:
patent: 6433359 (2002-08-01), Kelley et al.
patent: 6558987 (2003-05-01), Lee
patent: 6563174 (2003-05-01), Kawasaki et al.
patent: 6586791 (2003-07-01), Lee et al.
patent: 7005674 (2006-02-01), Lee et al.
patent: 7029945 (2006-04-01), Veres et al.
patent: 7170093 (2007-01-01), Wu et al.
patent: 7456424 (2008-11-01), Wu et al.
patent: 7459721 (2008-12-01), Nakamura
patent: 2006/0180809 (2006-08-01), Park et al.
patent: 2006/0214154 (2006-09-01), Yang et al.
Hu Tarng-Shiang
Lee Cheng-Chung
Lee Wen-Hsi
Lin Wei-Ling
Wang Jiun-Jie
Fox Brandon
Industrial Technology Research Institute
Vu David
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