Electronic devices utilizing spin torque transfer to flip...

Details Electronic devices utilizing spin torque transfer to flip... Electronic devices utilizing spin torque transfer to flip...

2011-04-26

2011-04-26

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S171000, C365S225500, C365S243500, C977S935000

Reexamination Certificate

active

07933146

ABSTRACT:
Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher
patent: 5695864 (1997-12-01), Slonczewski
patent: 5734605 (1998-03-01), Zhu
patent: 5991193 (1999-11-01), Gallagher
patent: 6130835 (2000-10-01), Scheuerlein
patent: 6169686 (2001-01-01), Brug
patent: 6256223 (2001-07-01), Sun
patent: 6331944 (2001-12-01), Monsma
patent: 6385082 (2002-05-01), Abraham
patent: 6714444 (2004-03-01), Huai
patent: 6798689 (2004-09-01), Muller
patent: 6873544 (2005-03-01), Perner
patent: 6925000 (2005-08-01), Sussner
patent: 6977838 (2005-12-01), Tsang
patent: 6982916 (2006-01-01), Tsang
patent: 7009877 (2006-03-01), Huai
patent: 7031178 (2006-04-01), Parkin
patent: 7098494 (2006-08-01), Pakala
patent: 7187577 (2007-03-01), Wang
patent: 7218550 (2007-05-01), Schwabe
patent: 7224601 (2007-05-01), Panchula
patent: 7230844 (2007-06-01), Deak
patent: 7272034 (2007-09-01), Chen
patent: 7282755 (2007-10-01), Pakala
patent: 7286395 (2007-10-01), Chen
patent: 7289356 (2007-10-01), Diao
patent: 7345912 (2008-03-01), Luo
patent: 7369427 (2008-05-01), Diao
patent: 7379327 (2008-05-01), Chen
patent: 7382664 (2008-06-01), Le Phan
patent: 7394684 (2008-07-01), Inokuchi
patent: 7489541 (2009-02-01), Pakala
patent: 7502249 (2009-03-01), Ding
patent: 7515457 (2009-04-01), Chen
patent: 7596015 (2009-09-01), Kitagawa et al.
patent: 7768824 (2010-08-01), Yoshikawa et al.
patent: 2002/0136047 (2002-09-01), Scheuerlein
patent: 2003/0007398 (2003-01-01), Daughton et al.
patent: 2003/0168684 (2003-09-01), Pan
patent: 2006/0018057 (2006-01-01), Huai
patent: 2006/0209600 (2006-09-01), Le Phan
patent: 2007/0019337 (2007-01-01), Apalkov et al.
patent: 2007/0085068 (2007-04-01), Apalkov et al.
patent: 2007/0096229 (2007-05-01), Yoshikawa et al.
patent: 2007/0105241 (2007-05-01), Leuschner
patent: 2007/0246787 (2007-10-01), Wang
patent: 2007/0297220 (2007-12-01), Yoshikawa et al.
patent: 2008/0117553 (2008-05-01), Carey
patent: 2008/0144355 (2008-06-01), Boeve
patent: 2008/0164547 (2008-07-01), Higo et al.
patent: 2008/0197431 (2008-08-01), Morise
patent: 2008/0205125 (2008-08-01), Kajiyama
patent: 2008/0225583 (2008-09-01), Guo et al.
patent: 2008/0258247 (2008-10-01), Mancoff et al.
patent: 2008/0273380 (2008-11-01), Diao
patent: 2008/0310213 (2008-12-01), Chen
patent: 2008/0310214 (2008-12-01), Wang et al.
patent: 2008/0310219 (2008-12-01), Chen
patent: 2009/0027810 (2009-01-01), Horng et al.
patent: 2009/0040855 (2009-02-01), Luo
patent: 2009/0050991 (2009-02-01), Nagai
patent: 2009/0185410 (2009-07-01), Huai
patent: 2009/0302403 (2009-12-01), Nguyen
patent: 2010/0007344 (2010-01-01), Guo
patent: 1248265 (2002-10-01), None
patent: 1296331 (2003-03-01), None
patent: 1321943 (2003-06-01), None
U.S. Appl. No. 12/415,257, filed Mar. 31, 2009, Dimitrov.
U.S. Appl. No. 12/234,929, filed Sep. 22, 2008, Xi.
J.C. Slonczweski, PRB, vol. 39, 10, p. 6995 (1989).
Hosomi et al., Electron Devices Meeting, 2005, IEDM Technical Digest, IEEE International, pp. 459-462.
H. (N) or (H)umata, T. Suzuki, N. Ohshima, S. Fukami, K. Nagahara, N. Ishiwata, and N. Kasai, Scalable Cell Technology Utilizing Domain Wall Motion for High Speed MRAM, T12B-4, Symposium on VLSI Technology, Japan 2007.
J.C. Sun et al., APL 90, 121128 (2007).
Myoung, Jae Lee et al., in 2 Stack 1D-1R Cross Point Structure with Oxide Diodes as Switch Elements in High Density Resistance RAM Applications, IEDM 2007.
M. Nakayama et al., JAP 103, 07A710 (2008).
Agilent 81140A Series 81141A/81142A Serial Pulse Data Generators 7GHz and 13.5 GHz, Data Sheet, Version 1.1.
Akerman, Toward a Universal Memory, Science, vol. 308, Apr. 22, 2005.
Kawahara et al., Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read, ISSCC 07, San Francisco, Feb. 2007.
LeClair et al., Sign Reversal of Spin Polarization in Co/Ru/AI2O3/Co Magnetic Tunnel Junctions, Physical Review B, vol. 64, 100406(R).
Li, et al., Bias Dependence and Inversion of the Tunneling Magnetoresistance in Ferromagnetic Junctions, Physical Review B 69, 054410 (2004).
Ozatay et al., Spin Transfer by Nonuniform Current Injection Into a Nanomagnet, Applied Physics Letters 88, 202502 (2006).
Sharma et al., Inversion of Spin Polarization and Tunneling Magnetoresistance in Spin-Dependent Tunneling Junctions, Physical Review Letters, vol. 82, No. 3, Jan. 18, 1999.
Slonczewski, J.C., Current-Driven Excitation of Magnetic Multilayers, Journal of Magnetism and Magnetic Materials 159 (1996) L1-L7.
U.S. Appl. No. 12/415,243 filed Mar. 31, 2009, Inventors: Dimitrov.
Valenzuela et al., Spin Polarized Tunneling at Finite Bias, Physical Review Letters, PRL 94, 196601 (2005).
Waintal, et al., Role of Spin-Dependent Interface Scattering in Generating Current-Induced Torques in Magnetic Multilayers, Phy. Rev. B, vol. 62, 12317 (2000).
Yuasa et al., Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions, Science 297, 234 (2002).

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