Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-10
2010-10-26
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21561
Reexamination Certificate
active
07821067
ABSTRACT:
An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions can have different stresses compared to each other. In one embodiment, the electronic device may be formed by forming an oxidation mask over the first semiconductor portion. A second semiconductor layer can be formed over the second semiconductor portion of the first semiconductor layer and have a different composition compared to the first semiconductor layer. An oxidation can be performed, and a concentration of a semiconductor element (e.g., germanium) within the second portion of the first semiconductor layer can be increased. In another embodiment, a selective condensation may be performed, and a field isolation region can be formed between the first and second portions of the first semiconductor layer.
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Goolsby Brian J.
McCormick Linda B.
Nguyen Bich-Yen
Parker Colita M.
Sadaka Mariam G.
Booth Richard A.
Freescale Semiconductor Inc.
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