Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-01
2007-05-01
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S692000, C257SE23141, C257SE21575, C977S784000
Reexamination Certificate
active
11065929
ABSTRACT:
Embodiments of the present invention are directed to methods for fabricating microscale-to-nanoscale interfaces. In numerous embodiments of the present invention, hybrid microscale
anoscale crossbar multiplexers/demultiplexers provide for selection and control of individual nanowires through a set of microscale signal lines. In order to overcome the difficulty of aligning nanowires with submicroscale and microscale signal lines, at least a portion of the interconnections between nanowires and sub-microscale or microscale signal lines are randomly generated by one of various connection-fabrication methods. Addresses for individual nanowires, or groups of nanowires, can be discovered by testing the microscale-to-nanoscale interfaces.
REFERENCES:
patent: 6887450 (2005-05-01), Chen et al.
patent: 6891744 (2005-05-01), Chen et al.
patent: 6900479 (2005-05-01), DeHon et al.
patent: 6962823 (2005-11-01), Empedocles et al.
patent: 7064000 (2006-06-01), Goldstein et al.
patent: 7112525 (2006-09-01), Bhansali et al.
patent: 2004/0093575 (2004-05-01), Heath et al.
Chen Yong
Hogg Tad
LandOfFree
Electronic devices fabricated by use of random connections does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic devices fabricated by use of random connections, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic devices fabricated by use of random connections will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3776587