Electronic devices fabricated by use of random connections

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S692000, C257SE23141, C257SE21575, C977S784000

Reexamination Certificate

active

11065929

ABSTRACT:
Embodiments of the present invention are directed to methods for fabricating microscale-to-nanoscale interfaces. In numerous embodiments of the present invention, hybrid microscale
anoscale crossbar multiplexers/demultiplexers provide for selection and control of individual nanowires through a set of microscale signal lines. In order to overcome the difficulty of aligning nanowires with submicroscale and microscale signal lines, at least a portion of the interconnections between nanowires and sub-microscale or microscale signal lines are randomly generated by one of various connection-fabrication methods. Addresses for individual nanowires, or groups of nanowires, can be discovered by testing the microscale-to-nanoscale interfaces.

REFERENCES:
patent: 6887450 (2005-05-01), Chen et al.
patent: 6891744 (2005-05-01), Chen et al.
patent: 6900479 (2005-05-01), DeHon et al.
patent: 6962823 (2005-11-01), Empedocles et al.
patent: 7064000 (2006-06-01), Goldstein et al.
patent: 7112525 (2006-09-01), Bhansali et al.
patent: 2004/0093575 (2004-05-01), Heath et al.

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