Electronic devices based on current induced magnetization...

Details Electronic devices based on current induced magnetization... Electronic devices based on current induced magnetization...

2011-07-26

2011-07-26

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S171000

Reexamination Certificate

active

07986544

ABSTRACT:
The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters.

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