Electronic devices at the wafer level having front side and...

Details Electronic devices at the wafer level having front side and... Electronic devices at the wafer level having front side and...

2004-08-26

2008-08-26

Nguyen, Tuan H (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S787000

Reexamination Certificate

active

07417305

ABSTRACT:
Methods for applying a dielectric protective layer to a wafer in wafer-level chip scale package manufacture are disclosed. A flowable dielectric protective material with fluxing capability is applied over the active surface of an unbumped semiconductor wafer to cover active device areas, bond pads, test socket contact locations, and optional pre-scribed wafer street trenches. Preformed solder balls are then disposed over the bond pads, and the wafer is subjected to a heating process to reflow the solder balls and at least partially cure the dielectric protective material. During the heating process, the dielectric protective material provides a fluxing capability to enable the solder balls to wet the bond pads. In other exemplary embodiments, the dielectric protective material is applied over only intended physical contact locations and/or pre-scribed wafer street trenches, in which case the dielectric protective material need not include flux material and may additionally include a filler material.

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Barrett et al., “Polymer Collar WLP—A New Wafer Level Package For Improved Solder Joint Reliability,” date unknown, 9 pages, Kulicke & Soffa, Phoenix, AZ.

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