Electronic devices and their manufacture

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257751, H01L 2348, H01L 2352, H01L 2940

Patent

active

060877308

ABSTRACT:
A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of properties for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.

REFERENCES:
patent: 4963701 (1990-10-01), Yasumoto et al.
patent: 5083190 (1992-01-01), Pfiester
patent: 5130829 (1992-07-01), Shannon
patent: 5272370 (1993-12-01), French
patent: 5298312 (1994-03-01), Oyama et al.
patent: 5407866 (1995-04-01), Sellers
patent: 5691090 (1997-11-01), Isao et al.
patent: 5691782 (1997-11-01), Nishikawa et al.
"Proceedings of the 9th International Display Research Conference", Japan Display '89, Oct. 16-18, 1989, pp. 506-509.

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