Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-09-19
2000-07-11
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, H01L 2348, H01L 2352, H01L 2940
Patent
active
060877308
ABSTRACT:
A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of properties for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.
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patent: 5298312 (1994-03-01), Oyama et al.
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patent: 5691090 (1997-11-01), Isao et al.
patent: 5691782 (1997-11-01), Nishikawa et al.
"Proceedings of the 9th International Display Research Conference", Japan Display '89, Oct. 16-18, 1989, pp. 506-509.
Deane Steven C.
French Ian D.
McGarvey Brian P.
Trainor Michael J.
Clark Sheila V.
Piotrowski Tony E.
U.S. Philips Corporation
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