Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2007-12-11
2007-12-11
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S484000, C257SE21450, C257SE29320, C257SE29265, C257SE31131, C438S570000
Reexamination Certificate
active
10887244
ABSTRACT:
An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.
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Ahrens Cartens
Bartl Ulf
Eisener Bernd
Hartung Wolfgang
Herzum Christian
Infineon - Technologies AG
Maginot Moore & Beck
Sefer A.
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