Electronic device with connecting structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S202000, C257S330000, C257S332000, C257SE29121, C257SE29122, C257SE29131, C438S270000

Reexamination Certificate

active

08044460

ABSTRACT:
A connecting structure for an electronic device includes an edge region of the device, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.

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patent: 4941026 (1990-07-01), Temple
patent: 5637898 (1997-06-01), Baliga
patent: 5864159 (1999-01-01), Takahashi
patent: 6525375 (2003-02-01), Yamaguchi et al.
patent: 6545316 (2003-04-01), Baliga
patent: 6885062 (2005-04-01), Zundel et al.
patent: 2004/0010036 (2004-01-01), Rogovoy et al.
patent: 2004/0015036 (2004-01-01), Forrester
patent: 2005/0017293 (2005-01-01), Zundel et al.
patent: 2005/0032287 (2005-02-01), Nakazawa et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2006/0017056 (2006-01-01), Hirler
patent: 10207309 (2003-09-01), None
patent: 102004029435 (2006-01-01), None
patent: 1168455 (2002-01-01), None
patent: 1610390 (2005-12-01), None

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