Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-01-19
1996-11-05
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
365145, 365149, 361312, 361313, 361322, H01L 2994, H01G 420, H01G 406, G11C 1122
Patent
active
055720528
ABSTRACT:
In an electronic device using lead zirconate titanate (PZT) or lanthanum lead zirconate titanate (PLZT) as the main insulating material, a PZT film or a PLZT film is formed on a sub-insulating layer consisting essentially of lead titanate, lanthanum lead titanate, barium titanate, strontium titanate, barium strontium titanate, lead zirconate, or lanthanum lead zirconate. In an MIS structure, a semiconductor, the sub-insulating layer, the PZT film and metal are deposited in order. In a capacitor, the sub-insulating layer and the PZT film are sandwiched between a pair of electrodes. The sub-insulating layer improves crystallinity of PZT or PLZT, and the dielectric constant. An oxide of Pb, La, Zr or Ti can be added as the sub-insulating layer in order to further suppress current leakage.
REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 4727004 (1988-02-01), Tanaka et al.
patent: 4873610 (1989-10-01), Shimizu et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5198269 (1993-03-01), Swartz et al.
patent: 5248564 (1993-09-01), Kamesh
patent: 5326721 (1994-07-01), Summerfelt
patent: 5338951 (1994-08-01), Argos, Jr. et al.
"Preparation of PbTiO.sub.3 Thin Films by MOCVD Under Atmospheric Pressure", by Masaru Okada et al, Technical Paper of the Ceramics Society of Japan 96 (6), pp. 687-693, 1988. (no translation except 93 abstract).
"Metalorganic Chemical Vapor Deposition of c-Axis Oriented PZT Thin Films", by Masaru Okada, Japanese Journal of Applied Physics Vo., 29, No. 4, pp. 718-722, Apr. 1990.
"Barrier Layers for Realizationof High Capacitance Density in SrTiO.sub.3 Thin-Film Capacitor on Silicon", by Toshiyuki Sakuma et al, Appl. Phys. Lett. 57 (23), pp. 2431-2433. Dec. 3, 1990.
"Formation of Epitaxial Pb(Zr Ti)O.sub.3 Film by CVD", by Hiroshi Funakubo et al, Technical Paper of the Ceramics Society of Japan 99 (3), pp. 248-250, 1991.
Itoh Hiromi
Kashihara Keiichiro
Okudaira Tomonori
Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
Tang Alice W.
LandOfFree
Electronic device using zirconate titanate and barium titanate f does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic device using zirconate titanate and barium titanate f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic device using zirconate titanate and barium titanate f will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2016649