Electronic device substrate structure and electronic device

Details Electronic device substrate structure and electronic device Electronic device substrate structure and electronic device

2005-02-15

2005-02-15

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S416000, C257S420000, C148S033000, C148S033400

Reexamination Certificate

active

06855996

ABSTRACT:
An electronic device substrate structure including a substrate2,a metal thin film4as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate2,and a wurtzite type thin film5as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film4,wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film4is a (111)-oriented film, <11-20> axes in the plane of the wurtzite type thin film5are parallel to <1-10> axes in the plane of the metal thin film4;and when the metal thin film4is a (0001)-oriented film, <11-20> axes in the plane of the wurtzite type thin film5are parallel to <11-20> axes in the plane of the metal thin film4.

REFERENCES:
patent: 6045626 (2000-04-01), Yano et al.
patent: 8-109099 (1996-04-01), None
patent: 11-260835 (1999-09-01), None
Hirofumi Fukumoto, et al., “Heteroepitaxial Growth of Yttria-Stablized Zirconia (YSZ) on Silicon”, Japanese Journal of Applied Physics, vol. 27, No. 8, Aug., 1988, pp. L1404-L1405.

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