Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-10-17
2006-10-17
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S787000, C257S788000, C257SE23116, C257SE23136
Reexamination Certificate
active
07122908
ABSTRACT:
An electronic device package comprises a substrate, a die, and a material having a Young's modulus of between about 0.1 megapascals and about 20 megapascals (at a solder reflow temperature) for attaching the die to the substrate. In one embodiment, the package utilizes a material having a Young's modulus of between about 0.1 megapascals and about 20 megapascals (at a solder reflow temperature) for attaching the die to the substrate. In an alternate embodiment, the package utilizes a material having a coefficient of thermal expansion α2of less than about 400 (four-hundred) ppm (parts per million)/° C. for attaching the die to the substrate. In another alternate embodiment, the package utilizes a rigid material for attaching the die to the substrate.
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Du Yong
Jiang Tongbi
Micro)n Technology, Inc.
Parekh Nitin
Schwegman Lundberg Woessner & Kluth P.A.
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