Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-21
2009-06-30
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S584000, C438S610000, C438S652000, C438S687000, C257SE21174, C257SE21582, C257SE23072, C257SE23159
Reexamination Certificate
active
07553754
ABSTRACT:
In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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Gotoh Hiroshi
Kugimiya Toshihiro
Nakai Jun-ichi
Tomihisa Katsufumi
Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd).
Lebentritt Michael S
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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