Electronic device manufacturing method

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S687000

Reexamination Certificate

active

06998342

ABSTRACT:
An electronic device manufacturing method comprises forming an insulating film above a substrate, forming a to-be-filled region which includes at least one of an interconnection groove and a hole in the insulating film, forming a first conductive film containing a catalyst metal which accelerates electroless plating, so as to line an internal surface of the to-be-filled region, forming a second conductive film on the first conductive film by the electroless plating, so as to line the internal surface of the to-be-filled region via the first conductive film, and forming a third conductive film on the second conductive film by electroplating, so as to fill the to-be-filled region via the first conductive film and the second conductive film.

REFERENCES:
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5899740 (1999-05-01), Kwon
patent: 5969422 (1999-10-01), Ting et al.
patent: 6001461 (1999-12-01), Toyoda et al.
patent: 6197181 (2001-03-01), Chen
patent: 6555171 (2003-04-01), Lopatin
patent: 2000-183160 (2000-06-01), None

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