Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-12-20
1999-07-27
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438489, H01L 2100, H01L 2184
Patent
active
059306068
ABSTRACT:
In the manufacture of an electronic device comprising thin-film circuitry, a semiconductor film (1) on a polymer substrate (2) is subjected to a laser treatment, for example laser crystallisation, with a laser beam (10). The beam is reflected by the film (1). Significant non-uniformities in the laser treatment are found to occur due to a local overheating effect if the reflected laser beam 10b impinges again on the heated area of the film (1). Thus, the invention identifies a particularly acute problem which arises when the device substrate (2) is of a heat-distortable polymer material in that the substrate (2) may experience temporarily a concave distortion at an area where the semiconductor film (1) on the substrate (2) is heated by the incident laser beam (10). The beam is focused as well as reflected by the concave distortion in the substrate (2). Although the film (1) is under a window (22) of the treatment cell (20), this focused and reflected laser beam (10a) is prevented from being reflected again onto the same area of the film (1), by tilting the window (22) and/or the film/substrate (1,2) at the area of the concave distortion at an angle .theta. so as to be inclined with respect to one another along the path of the beam (10).
REFERENCES:
patent: 4059461 (1977-11-01), Fan et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 5130829 (1992-07-01), Shannon
patent: 5453122 (1995-09-01), Chae
patent: 5696003 (1997-12-01), Makita et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5756634 (1998-05-01), Tanaka et al.
Excimer-Laser-Annealed Poly-Si Thin-Film Transistors , by S.D. Brotherton et al, IEEE Transaction on Electron Devices, vol. 40, No. 2, Feb. 1993.
Beam Shape Effects With Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon , S.D. Brotherton et al, Solid State Phenomena vols. 37-38 (1994) pp. 299-304, Month Unknown.
Fox John C.
Lebentritt Michael S.
Niebling John F.
U.S. Philips Corporation
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