Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-24
2010-11-23
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29129, C257SE29309
Reexamination Certificate
active
07838922
ABSTRACT:
An electronic device can include a substrate including a trench having a bottom and a first wall. The electronic device can also include a first gate electrode within the trench and adjacent to the first wall and overlying the bottom of the trench, a second gate electrode overlying the substrate outside of the trench, and a third gate electrode within the trench and adjacent to the first gate electrode and overlying the bottom of the trench. The electronic device can also include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies adjacent to the first wall of the trench. Processes of forming and using the electronic device are also described.
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U
Hong Cheong Min
Li Chi-Nan
Freescale Semiconductor Inc.
Quinto Kevin
Tran Minh-Loan T
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