Electronic device including semiconductor fins and a process...

Details Electronic device including semiconductor fins and a process... Electronic device including semiconductor fins and a process...

2006-05-02

2010-11-23

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S308000, C257S722000, C257SE21014, C257SE21637, C257SE21623

Reexamination Certificate

active

07838345

ABSTRACT:
An electronic device can include a first semiconductor fin and a second semiconductor fin, each spaced-apart from the other. The electronic device can also include a bridge lying between and contacting each of the first semiconductor fin and the second semiconductor fin along only a portion of length of each of the first semiconductor fin and the second semiconductor fin, respectively. In another aspect, a process for forming an electronic device can include forming a first semiconductor fin and a second semiconductor fin from a semiconductor layer, each of the first semiconductor fin and the second semiconductor fin spaced-apart from the other. The process can also include forming a bridge that contacts the first semiconductor fin and second semiconductor fin. The process can further include forming a conductive member, including a gate electrode, lying between the first semiconductor fin and second semiconductor fin.

REFERENCES:
patent: 6858478 (2005-02-01), Chau et al.
patent: 7423321 (2008-09-01), Liao et al.
patent: 7453124 (2008-11-01), Adan
patent: 7728360 (2010-06-01), Chen et al.
U.S. Appl. No. 11/339,101, filed Jan. 25, 2006; first-named inventor Sinan Goktepeli; entitled Method for Producing Two Gates Controlling the Same Channel.

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