Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-25
2009-11-17
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S332000, C257SE29257, C257SE29260
Reexamination Certificate
active
07619270
ABSTRACT:
An electronic device can include discontinuous storage elements that lie within a trench. The electronic device can include a substrate including a trench that includes a wall and a bottom and extends from a primary surface of the substrate. The electronic device can also include discontinuous storage elements, wherein a portion of the discontinuous storage elements lies at least within the trench. The electronic device can further include a first gate electrode, wherein at least a part of the portion of the discontinuous storage elements lies between the first gate electrode and the wall of the trench. The electronic device can still further include a second gate electrode overlying the first gate electrode and the primary surface of the substrate.
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Chindalore Gowrishankar L.
Ingersoll Paul A.
Swift Craig T.
Freescale Semiconductor Inc.
Wojciechowicz Edward
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