Electronic device including discontinuous storage elements...

Details Electronic device including discontinuous storage elements... Electronic device including discontinuous storage elements...

2007-08-14

2007-08-14

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257SE29131

Reexamination Certificate

active

11188953

ABSTRACT:
An electronic device can include discontinuous storage elements that lie within a trench. In one embodiment, the electronic device can include a substrate that includes a trench extending into a semiconductor material. The trench can include a ledge and a bottom, wherein the bottom lies at a depth deeper than the ledge. The electronic device can include discontinuous storage elements, wherein a trench portion of the discontinuous storage elements lies within the trench. Gate electrodes may lie adjacent to walls of the trench. In a particular embodiment, a portion of a channel region within a memory cell may not be covered by a gate electrode. In another embodiment, a doped region may underlie the ledge and allow for memory cells to be formed at different elevations within the trench. In other embodiment, a process can be used to form the electronic device.

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