Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S761000, C438S240000, C438S287000
Reexamination Certificate
active
07091568
ABSTRACT:
A mixture of materials can be used within a layer of an electronic device to improve electrical and physical properties of the layer. In one set of embodiments, the layer can be a dielectric layer, such as a gate dielectric layer or a capacitor dielectric layer. The dielectric layer can include O, and two or more dissimilar metallic elements. In one specific embodiment, two dissimilar elements may have the same single oxidation state and be miscible within each other. In one embodiment, the dielectric layer can include an alloy of (HfO2)(1-x)(ZrO2)x, wherein x is between 0 and 1. Each of Hf and Zr has a single oxidation state of +4. Other combinations are possible. Improved electrical and physical properties can include better control over grain size, distribution of grain sizes, thickness of the layer across a substrate, improved carrier mobility, threshold voltage stability, or any combination thereof.
REFERENCES:
patent: 5810923 (1998-09-01), Yano et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5844849 (1998-12-01), Furutani
patent: 6552403 (2003-04-01), Lucovsky
patent: 6686264 (2004-02-01), Lucovsky
patent: 6724648 (2004-04-01), Khellah et al.
patent: 6894353 (2005-05-01), Samavedam et al.
patent: 2001/0023120 (2001-09-01), Tsunashima et al.
patent: 2002/0024108 (2002-02-01), Lucovsky et al.
patent: 2003/0139026 (2003-07-01), Lucovsky
patent: 2004/0023461 (2004-02-01), Ahn et al.
patent: 2005/0148127 (2005-07-01), Jung et al.
patent: 1179837 (2002-02-01), None
U.S. Department of Energy, “Aluminum Project Fact Sheet: In-Situ Grain Refinement Process for Aluminum,” Office of Industrial Technologies, Energy Efficiency and Renewable Energy, Washington, DC, Apr. 2001.
Kim, H.D., et al., “Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate,” J. Vac. Sci. Technol. A 22(4), pp. 1342-1346, Jul./Aug. 2004.
Kim, Hyongsub, et al., “Microstructural evolution of ZrO2-HfO2nanolaminate structures grown by atomic layer deposition,” J. Mater. Res., vol. 19, No. 2, pp. 643-650, Feb. 2004.
T. Li, et al., “Integration Processes and Properties of Pt/Pb5Ge3O11/(Zr, Hf) O2/Si One Transistor Memory Devices,” Mat. Res. Soc. Symp. Proc., vol. 688, pp. 371-376, 2002.
Lucovsky, G., “Integration of alternative high-k gate dielectrics into aggressively scaled CMOS Si devices: Chemical bonding constraints at Si-dielectric interfaces,” Electrochemical Society Proceedings, vol. 99-10, pp. 69-80.
Lucovsky, G., “Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys,” APL, vol. 77, pp. 2912-2914, 2000.
Demkov Alexander A.
Hegde Rama I.
Tobin Philip J.
Triyoso Dina H.
Freescale Semiconductor Inc.
Lee Hsien-Ming
LandOfFree
Electronic device including dielectric layer, and a process... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic device including dielectric layer, and a process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic device including dielectric layer, and a process... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3625286