Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-11-08
2008-09-02
Pham, Thanh V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S020000, C257S190000, C257S505000, C257S506000, C257S507000, C257S509000, C257S524000, C438S151000, C438S196000, C438S404000, C438S405000, C438S595000, C438S764000, C438S765000, C438S769000, C438S770000, C438S775000, C438S778000, C438S787000, C438S791000, C372S045011
Reexamination Certificate
active
07420202
ABSTRACT:
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and the first stress type may be tensile, or the transistor structure may be an n-channel transistor structure and the first stress type may be compressive. The transistor structure can include a channel region that lies within an active region. An edge of the active region includes the interface between the channel region and the field isolation region. From a top view, the layer can include an edge the lies near the edge of the active region. The positional relationship between the edges can affect carrier mobility within the channel region of the transistor structure.
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U.S. Appl. No. 11/148,455, filed Jun. 9, 2005.
Adams Vance H.
Grudowski Paul A.
Kolagunta Venkat R.
Winstead Brian A.
Freescale Semiconductor Inc.
Pham Thanh V
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