Electronic device including a static-random-access memory...

Details Electronic device including a static-random-access memory... Electronic device including a static-random-access memory...

2006-01-23

2008-08-19

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S063000, C365S156000

Reexamination Certificate

active

07414877

ABSTRACT:
An electronic device can include a static-random-access memory cell. The static-random-access memory cell can include a first transistor of a first type and a second transistor of a second type. The first transistor can have a first channel length extending along a first line, and the second transistor can have a second channel length extending along a second line. The first line and the second line can intersect at an angle having a value other than any integer multiple of 22.5°. In a particular embodiment, the first transistor can include a pull-up transistor, and the second transistor can include a pass gate or pull-down transistor. A process can be used to form semiconductor fins and conductive members, which include gate electrode portions, to achieve the electronic device including the first and second transistors.

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