Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-08-07
2010-10-12
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S737000, C257S751000, C257S762000, C257SE21506, C257SE23023
Reexamination Certificate
active
07812448
ABSTRACT:
An electronic device can include an interconnect level (16) including a bonding pad region (110). An insulating layer (18) can overlie the interconnect level (16) and include an opening (112, 24) over the bonding pad region (110). In one embodiment, a conductive stud (34) can lie within the opening (112, 24) and can be substantially encapsulated. In another embodiment, the electronic device can include a barrier layer (22) lying along a side and a bottom of the opening (112, 24) and a conductive stud (34) lying within the opening (112, 24). The conductive stud (34) can substantially fill the opening (112, 24). A majority of the conductive stud (34) can lie within the opening (112, 24). In still another embodiment, a process for forming an electronic device can include forming a conductive stud (34) within the opening (112, 24) wherein the conductive stud (34) lies substantially completely within the opening (112, 24). The process can also include forming a second barrier layer (52) overlying the conductive stud (34).
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Lee Tien Yu T.
Ramanathan Lakshmi N.
Tang Jinbang
Freescale Semiconductor Inc.
Vu Hung
Webb Vernon P
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