Active solid-state devices (e.g. – transistors – solid-state diode – Point contact device
Reexamination Certificate
2007-09-06
2009-08-18
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Point contact device
C257S040000, C257S213000, C257S039000, C257SE51005, C257SE51040, C257SE51023, C438S099000, C438S100000, C438S002000, C977S936000, C977S938000
Reexamination Certificate
active
07576355
ABSTRACT:
Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device includes: a substrate; a first electrode and a second electrode which are formed in parallel to each other on the substrate, each of the first electrode and the second electrode comprising two electrode pads separated from each other and a heating element that connect the two electrode pads; a catalyst metal layer formed on the heating element of the first electrode; and a carbon nanotube connected to the second electrode by horizontally growing from the catalyst metal layer; wherein the heating elements are separated from the substrate by etching the substrate under the heating elements of the first and the second electrodes.
REFERENCES:
patent: 7087920 (2006-08-01), Kamins
Choi Jun-hee
Zoulkarneev Andrei
Harness & Dickey & Pierce P.L.C.
Ho Tu-Tu V
Samsung Electronics Co,. Ltd.
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