Electronic device comprising non volatile memory cells and...

Details Electronic device comprising non volatile memory cells and... Electronic device comprising non volatile memory cells and...

2011-05-10

2011-05-10

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

C365S185250, C365S185130, C365S185170

Reexamination Certificate

active

07940590

ABSTRACT:
A device with non volatile memory cells, with optimized programming, of the type comprising a sector of matrix memory cells organized in rows and columns, with the columns organized in a plurality of global bit-lines associated with at least one plurality of local bit-lines and respectively enabled by a first select signal and by at least one second select signal generated by a decoder, these columns being associated with at least one program load PL controlled by a logic circuit and suitable for applying a programming pulse to a plurality of cells belonging to the enabled bit-lines, comprising a plurality of discharge transistors, each associated with a corresponding column controlled by a control signal complementary to the control signal of the adjacent discharge transistor.

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