Electronic device and method of fabricating the same

Details Electronic device and method of fabricating the same Electronic device and method of fabricating the same

2006-09-12

2006-09-12

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21208, C438S003000

Reexamination Certificate

active

07105880

ABSTRACT:
The electronic device includes a substrate, a lower conductive film provided on the substrate, a functional film provided on the lower conductive film, and a crystallinity barrier film provided between the lower conductive film and the functional film. The present invention prevents the crystallinity of the functional film being affected by the crystallinity or the material selection of the lower conductive film, so it becomes possible to use a low-cost metal such as aluminum (Al) for the lower conductive film, and to use a low-cost method for forming the film, thereby making it possible to improve the crystallinity of the functional film without using a costly film-formation method such as epitaxial growth. For the crystallinity barrier film, there can be used a material having an amorphous structure.

REFERENCES:
patent: 6278150 (2001-08-01), Okudaira et al.
patent: 6290736 (2001-09-01), Evans
patent: 6475931 (2002-11-01), Bower et al.
patent: 6524932 (2003-02-01), Zhang et al.
patent: 6728093 (2004-04-01), Fox
patent: 6911689 (2005-06-01), Hsu et al.
patent: 3310881 (1997-04-01), None
patent: 11-312801 (1999-11-01), None
patent: 2001-313535 (2001-11-01), None

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