Electronic device and integrated circuit

Details Electronic device and integrated circuit Electronic device and integrated circuit

2007-03-13

2010-02-09

Chang, Daniel D (Department: 2819)

Electronic digital logic circuitry

Interface

Current driving

C326S086000, C326S088000, C326S027000

Reexamination Certificate

active

07659748

ABSTRACT:
An electronic device with a CMOS circuit (CC) comprises a first driver circuit (10) having a first and second PMOS transistor (P1, P2) and a first and second NMOS transistor (N1, N2). The electronic device furthermore comprise a second driver circuit (20) with a third and fourth PMOS transistor (P3, P4) and a third and fourth NMOS transistor (N3, N4). The second driver circuit (20) is complementary to the first driver circuit (10) and switches in the opposite direction to the first driver circuit (10). A gate of the second and fourth PMOS transistor (P2, P4) is coupled to a first bias voltage (REPp) and a gate of the second and fourth NMOS transistor (N2, N4) is coupled to a second bias voltage (REFn). A first capacitance (C3) is coupled between the gate and the drain of the fourth PMOS transistor (P4) and a second capacitance (C4) is coupled between the gate and the drain source of the fourth NMOS transistor (N4).

REFERENCES:
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patent: 5973534 (1999-10-01), Singh
patent: 6081132 (2000-06-01), Isbara
patent: 6570405 (2003-05-01), Lien
patent: 2002/0041194 (2002-04-01), Onizawa et al.
patent: 2002/0109525 (2002-08-01), Shin
patent: 2002/0113628 (2002-08-01), Ajit
Singh, Gajendra P, et al. “High-Tolerant I/O Buffers With Low Voltage CMOS Process,” IEEE Journal of Solid-State Circuits, 1999 vol. 34, No. 11, Nov. 1999.

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